1998. 8. 21 1/2 semiconductor technical data KTB1241 epitaxial planar pnp transistor revision no : 1 general purpose application. feature high breakdown voltage and high current : v ceo =-80v, i c =-1a. low v ce(sat) complementary to ktd1863. maximum rating (ta=25 1 ) dim millimeters a b d e g h k l 1. emitter 2. collector 3. base p to-92l 7.20 max 5.20 max 2.50 max 0.60 max 1.27 1.70 max 0.55 max 14.00 0.50 0.35 min 0.75 0.10 4 f j m o q 25 1.25 1.50 0.10 max depth:0.2 123 b a c q k ff m m n n o h l j d c n g p hh e d h r s 12.50 0.50 r 1.00 s 1.15 max + _ + _ + _ electrical characteristics (ta=25 1 ) note : h fe classification o:70 140, y:120 240, gr:200 400 characteristic symbol rating unit collector-base voltage v cbo -80 v collector-emitter voltage v ceo -80 v emitter base voltage v ebo -5 v collector current i c -1 a emitter current i e 1 a collector power dissipation p c 1 w junction temperature t j 150 1 storage temperature range t stg -55 150 1 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-60v, i e =0 - - -1 a emitter-cut-off current i ebo v eb =-4v, i c =0 - - -1 a collector-emitter breakdown voltage v (br)ceo i c =-1ma, i b =0 -80 - - v dc current gain h fe (note) v ce =-3v, i c =-100ma 70 - 400 collector-emitter saturation voltage v ce(sat) i c =-500ma, i b =-50ma - - -0.4 v transition frequency f t v ce =-5v, i c =-50ma, f=30mhz - 100 - mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz - 25 - pf
1998. 8. 21 2/2 KTB1241 revision no : 1 c -0.1 0 base-emitter voltage v (v) i - v c collector current i (ma) -1 -10 -100 -1000 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 be be ta=25 c v =-5v ce collector-emitter voltage v (v) collector current i (ma) 0 c ce ce c i - v -0.2 -0.4 -0.6 -0.8 -1.0 dc current gain h collector current i (ma) 10 c h - i fe 100 20 200 50 500 1000 fe c v =-3v ce v =-1v ce collector saturation ce(sat) -0.01 collector current i (ma) c c ce(sat) v - i voltage v (v) -0.03 -0.05 -0.1 -0.2 -0.5 -1 -2 i /i =20 c b i /i =10 b c ta=25 c transition frequency f (mhz) t 1 emitter current i (ma) c f - i te 1 2 5 10 20 50 100 200 500 1000 2 5 10 20 50 100 200 500 1000 ta=25 c v =-5v ce collector output capacitance c (pf) -0.1 1 10 -0.2 ob 100 2 20 200 5 50 500 1000 collector-base voltage v (v) -10 -0.5 -1 -5 -2 cb -20 -50 -100 c - v ob cb ta=25 c f=1mhz i =0a e collector current i (a) c -1m -10 -0.1 collector-emitter voltage v (v) ce safe operation area -0.2 -1 -2 -20 -100 -2m -5m -10m -20m -50m -100m -200m -500m i max. (pulse) c -0.5 -5 -50 -1 -2 -5 -10 p w = 1 0 ms p w= 10 0 ms ta=25 c *single nonrepetitive *printed circuit board: 1.7mm thick with collecor copper plating at least 1cm pulse 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 -1 -10 -100 -1000 -2 -20 -200 -5 -50 -500 -2000 -0.3ma -0.4ma -0.25ma -0.35ma -0.45ma -0.2ma -0.15ma -0.1ma -0.05ma i =0ma b ta=25 c -1 -10 -100 -1000 -2 -20 -200 -5 -50 -500 -2000 dc 2
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